P-channel JFET transistor, ideal for general-purpose small signal applications. Features a 12V drain-to-source breakdown voltage and a continuous drain current of 4.8A. Offers a low on-resistance of 35mΩ and operates within a temperature range of -55°C to 150°C. Packaged in a surface-mount SOIC package, this component is halogen-free and RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
Vishay SI9934BDY-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.8A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | -12V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Nominal Vgs | -1.4V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.4V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI9934BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI9934BDY-T1-GE3 to view detailed technical specifications.
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