Dual N-channel MOSFET, surface mount, designed for general-purpose small signal applications. Features a continuous drain current of 4.5A and a drain-source voltage of 30V. Offers a low drain-source on-resistance of 35mR. Operates within a temperature range of -55°C to 150°C. Packaged in a RoHS compliant SOIC N package, tape and reel.
PackageSOIC N
MountingSurface Mount
PolarityN-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI9936BDY-T1-E3 technical specifications.
General
| Package/Case | SOIC N |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35mR |
| Fall Time | 15ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.55mm |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.1W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | SI9 |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.006596oz |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI9936BDY-T1-E3 Datasheet
Download the complete datasheet for Vishay SI9936BDY-T1-E3 to view detailed technical specifications.
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