Dual N-channel JFET for general-purpose small signal applications. Features 30V drain-source voltage, 4.5A continuous drain current, and 35mΩ drain-to-source resistance. Operates across a -55°C to 150°C temperature range with a maximum power dissipation of 1.1W. Surface-mount device in an SOP-8 package, supplied on tape and reel. RoHS compliant with 10ns turn-on and 25ns turn-off delay times.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI9936BDY-T1-GE3 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 10ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | SI9 |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.006596oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI9936BDY-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI9936BDY-T1-GE3 to view detailed technical specifications.
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