MOSFET -12V [email protected] 31A P-Ch G-III
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Vishay SiA467EDJ-T1-GE3 technical specifications.
| Continuous Drain Current (ID) | 31A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 2.52nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 19W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 19W |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 90ns |
| RoHS | Compliant |
No datasheet is available for this part.
