The SIA471DJ-T1-GE3 is a P-channel TrenchFET Gen IV power MOSFET designed for high efficiency and high power density. It features low on-resistance and is optimized for power consumption in a compact PowerPAK SC-70 package.
Temp Range-55 to +150°C
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Technical Specifications
Vishay SIA471DJ-T1-GE3 technical specifications.
General
| Drain-Source Voltage (Vds) | -30V |
| Continuous Drain Current (Id) | 30.3A |
| Drain-Source On-State Resistance (Rds(on)) @ 10V | 14mOhm |
| Drain-Source On-State Resistance (Rds(on)) @ 4.5V | 20.5mOhm |
| Gate-Source Voltage (Vgs) | 20V |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.5V |
| Typical Gate Charge (Qg) @ 10V | 18.5nC |
| Max Power Dissipation (Pd) @ Tc=25°C | 19.2W |
| Operating Temperature Range | -55 to +150°C |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
| REACH | SVHC Named (Lead) |
Datasheet
Vishay SIA471DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA471DJ-T1-GE3 to view detailed technical specifications.
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