Dual P-channel MOSFET array, 12V Drain-Source Voltage, 4.3A Continuous Drain Current, 50mΩ Drain-Source Resistance. Features 2 N-channel FETs in a 6-pin PowerPAK SC-70 surface mount package. Operates from -55°C to 150°C with a maximum power dissipation of 6.5W. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 25ns.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA913ADJ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 25ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 590pF |
| Length | 2.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.5W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 61mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.000988oz |
| Width | 2.05mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA913ADJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA913ADJ-T1-GE3 to view detailed technical specifications.
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