P-channel MOSFET featuring a -30V drain-source voltage (Vdss) and a maximum continuous drain current of 4.5A. Offers a low on-resistance (Rds On) of 65mΩ at -10V Vgs, with a typical drain-source resistance of 77mΩ. Designed for surface mounting with a maximum power dissipation of 7.8W and an operating temperature range of -55°C to 150°C. Includes fast switching characteristics with a fall time of 5ns and turn-off delay time of 17ns.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SIA931DJ-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 445pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 7.8W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 23ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SIA931DJ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIA931DJ-T1-GE3 to view detailed technical specifications.
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