An N-channel metal-oxide semiconductor field-effect transistor (MOSFET) designed for high-efficiency power conversion. It features ThunderFET technology for low on-resistance and is optimized for low gate charge and increased power density in a PowerPAK SO-8 package.
Temp Range-55 to 150°C
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Technical Specifications
Vishay SIDR622DP-T1-RE3 technical specifications.
General
| Drain-Source Voltage (Vdss) | 150V |
| Continuous Drain Current (Id) @ Tc=25°C | 51.6A |
| Rds(on) Max @ Vgs=10V | 17.7mΩ |
| Gate-Source Voltage (Vgs) | ±20V |
| Gate Charge (Qg) Typ | 41nC |
| Power Dissipation (Pd) @ Tc=25°C | 104W |
| Operating Temperature Range | -55 to 150°C |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Vishay SIDR622DP-T1-RE3 Datasheet
Download the complete datasheet for Vishay SIDR622DP-T1-RE3 to view detailed technical specifications.
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