The SIDR870ADP-T1-RE3 is a high-performance N-channel enhancement mode power MOSFET utilizing TrenchFET Gen IV technology. It features a dual-side cooling (SO-8DC) package to provide significantly lower thermal resistance. The device is 100% Rg and UIS tested, offering very low RDS-on and gate charge figure-of-merit (FOM) optimized for power conversion applications.
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| Drain-Source Voltage (Vdss) | 100V |
| Continuous Drain Current (Id) | 137A |
| Drain-Source On-Resistance (Rds on) | 2.88mOhms |
| Gate-Source Threshold Voltage (Vgs th) | 3.5V |
| Total Gate Charge (Qg) | 55nC |
| Power Dissipation (Pd) | 125W |
| Operating Temperature Range | -55 to 150°C |
| RoHS | Compliant |
| Halogen-free | Yes |
