N-channel power MOSFET uses 4th generation E series technology with a fast body diode for high-voltage switching applications. It is rated for 600 V drain-source voltage, 11 A continuous drain current at 25 °C, and 179 W maximum power dissipation. The device has 0.109 Ω typical on-resistance at 10 V gate drive and 47 nC maximum total gate charge. Thin-Lead TO-220 FULLPAK packaging provides an isolated through-hole power package format, and the orderable lead-free, halogen-free version is specified in the datasheet.
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| Channel Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 600V |
| Drain-Source Voltage at Maximum Junction Temperature | 650V |
| Continuous Drain Current at 25 °C | 11A |
| Continuous Drain Current at 100 °C | 7A |
| Pulsed Drain Current | 66A |
| Typical On-Resistance at 10 V | 0.109Ω |
| Maximum On-Resistance at 10 V | 0.125Ω |
| Maximum Total Gate Charge | 47nC |
| Gate-Source Threshold Voltage | 3.0 to 5.0V |
| Gate-Source Voltage | ±30V |
| Input Capacitance | 1533 typicalpF |
| Reverse Transfer Capacitance | 6 typicalpF |
| Single Pulse Avalanche Energy | 88mJ |
| Maximum Power Dissipation | 179W |
| Operating Junction Temperature Range | -55 to +150°C |
| Junction-to-Case Thermal Resistance | 3.7 maximum°C/W |
| Lead Free | Yes |
| Halogen Free | Yes |
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