This N-channel power MOSFET is rated for 600 V drain-source operation and is offered in a D2PAK (TO-263) package. It uses 4th generation EF series technology with a fast body diode, 59 mΩ typical on-resistance at 10 V gate drive, and up to 41 A continuous drain current at 25 °C case temperature. The device is avalanche rated and specifies 77 nC maximum total gate charge, 2628 pF input capacitance, and 250 W maximum power dissipation. Operating junction temperature ranges from -55 °C to +150 °C, and the listed orderable versions are lead-free and halogen-free.
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Vishay SiHB068N60EF technical specifications.
| Drain-source voltage | 600V |
| Continuous drain current at TC = 25 °C | 41A |
| Continuous drain current at TC = 100 °C | 26A |
| Pulsed drain current | 115A |
| Drain-source on-resistance typ | 0.059Ω |
| Drain-source on-resistance max | 0.068Ω |
| Gate-source threshold voltage | 3 to 5V |
| Input capacitance | 2628pF |
| Output capacitance | 122pF |
| Reverse transfer capacitance | 7pF |
| Total gate charge max | 77nC |
| Gate-source charge | 19nC |
| Gate-drain charge | 16nC |
| Maximum power dissipation | 250W |
| Operating junction temperature range | -55 to 150°C |
| Thermal resistance junction-to-case | 0.5°C/W |
| Diode forward voltage | 1.2V |
| Reverse recovery time typ | 120ns |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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