
N-channel E Series power MOSFET supports 600 V drain-source operation and 29 A continuous drain current at 25 °C case temperature. The device has a maximum on-resistance of 0.125 Ω at 10 V gate drive and 15 A drain current. TO-220 FullPAK construction provides an isolated through-hole power package for high-voltage switching designs. Gate charge is 130 nC maximum, with low input capacitance and avalanche-energy rating for switching power applications. Operating junction and storage temperature range is -55 °C to +150 °C.
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| Transistor polarity | N-channel |
| Configuration | Single |
| Package | TO-220 FULLPAK |
| Drain-source voltage | 600 maxV |
| Drain-source breakdown voltage | 600 min at VGS = 0 V, ID = 250 µAV |
| Continuous drain current | 29 at TC = 25 °C, VGS = 10 VA |
| Continuous drain current at 100 °C | 18 at TC = 100 °C, VGS = 10 VA |
| Pulsed drain current | 76A |
| Gate-source voltage | ±30V |
| Drain-source on-state resistance | 0.125 max at VGS = 10 V, ID = 15 AΩ |
| Gate-source threshold voltage | 2.0 min, 2.8 typ, 4.0 maxV |
| Total gate charge | 130 max at VGS = 10 V, ID = 15 A, VDS = 480 VnC |
| Gate-source charge | 15 typnC |
| Gate-drain charge | 39 typnC |
| Input capacitance | 2600 typ at VDS = 100 V, f = 1 MHzpF |
| Output capacitance | 138 typ at VDS = 100 V, f = 1 MHzpF |
| Reverse transfer capacitance | 3 typ at VDS = 100 V, f = 1 MHzpF |
| Single pulse avalanche energy | 690mJ |
| Maximum power dissipation | 37W |
| Operating junction and storage temperature | -55 to +150°C |
| Thermal resistance junction-to-case | 3.4 max°C/W |
| Diode forward voltage | 1.3 max at TJ = 25 °C, IS = 15 AV |
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