This N-channel power MOSFET is rated for 600 V drain-source voltage and is housed in a PowerPAK 8 x 8 package with a Kelvin source connection. It supports 34 A continuous drain current at 25 °C case temperature and has a typical drain-source on-resistance of 0.059 Ω at 10 V gate drive. The device is avalanche rated and is intended for server and telecom power supplies, SMPS, PFC stages, lighting, and industrial power conversion. It operates across a junction and storage temperature range of -55 °C to +150 °C. The ordering information identifies the part as lead-free and halogen-free.
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Vishay SiHH068N60E technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 600V |
| Drain-Source Voltage at TJ max | 650V |
| Continuous Drain Current (TC=25°C) | 34A |
| Continuous Drain Current (TC=100°C) | 22A |
| Pulsed Drain Current | 100A |
| Drain-Source On-Resistance Typ | 0.059Ω |
| Drain-Source On-Resistance Max | 0.068Ω |
| Gate Threshold Voltage | 3.0 to 5.0V |
| Total Gate Charge Max | 80nC |
| Gate-Source Charge | 17nC |
| Gate-Drain Charge | 20nC |
| Input Capacitance | 2650pF |
| Output Capacitance | 113pF |
| Effective Output Capacitance, Energy Related | 94pF |
| Effective Output Capacitance, Time Related | 591pF |
| Power Dissipation | 202W |
| Junction-to-Case Thermal Resistance Max | 0.62°C/W |
| Operating Junction and Storage Temperature Range | -55 to +150°C |
| Reverse Recovery Time Typ | 377ns |
| Pb-free | Yes |
| Halogen-free | Yes |
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