N-channel power MOSFET uses Vishay's E Series process in a PowerPAK 8 x 8 package. It is rated for 500 V drain-source voltage, 22 A continuous drain current at 25 °C, and 174 W maximum power dissipation. The device has 0.147 ohm maximum on-resistance at 10 V gate drive and 70 nC maximum total gate charge. It supports avalanche-rated operation, a Kelvin connection for reduced gate noise, and an operating junction temperature range from -55 °C to 150 °C. The orderable lead-free and halogen-free version is supplied as SiHH20N50E-T1-GE3.
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| FET Type | N-Channel MOSFET |
| Configuration | Single |
| Drain-Source Voltage | 500V |
| Drain-Source Voltage at TJ max | 550V |
| Continuous Drain Current at TC 25°C | 22A |
| Continuous Drain Current at TC 100°C | 14A |
| Pulsed Drain Current | 53A |
| Gate-Source Voltage | ±30V |
| Drain-Source On-State Resistance max at VGS 10V | 0.147ohm |
| Total Gate Charge max | 70nC |
| Gate-Source Charge | 9nC |
| Gate-Drain Charge | 15nC |
| Maximum Power Dissipation | 174W |
| Single Pulse Avalanche Energy | 286mJ |
| Operating Junction and Storage Temperature Range | -55 to +150°C |
| Junction-to-Case Thermal Resistance max | 0.72°C/W |
| Input Capacitance typ | 2063pF |
| Output Capacitance typ | 108pF |
| Package | PowerPAK 8 x 8 |
| Lead-free | Lead (Pb)-free |
| Halogen-free | Halogen-free |
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