N-channel power MOSFET provides a 600 V drain-source rating and 24 A continuous drain current at case temperature. The device has 0.141 ohm maximum on-resistance at 10 V gate drive and 13 A drain current. It uses a PowerPAK 8 x 8 surface-mount package with Kelvin source connection and an integral fast body diode. Operating junction and storage temperature range is -55 °C to +150 °C. The orderable device is lead-free and halogen-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SiHH26N60EF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| FET Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 600V |
| Gate-Source Voltage | ±30V |
| Continuous Drain Current at Tc=25°C | 24A |
| Continuous Drain Current at Tc=100°C | 15A |
| Pulsed Drain Current | 67A |
| Maximum Power Dissipation | 202W |
| Drain-Source On-Resistance Max | 0.141ohm |
| Drain-Source On-Resistance Typ | 0.123ohm |
| Gate-Source Threshold Voltage | 2.0 to 4.0V |
| Total Gate Charge | 80 typ, 120 maxnC |
| Gate-Source Charge | 16nC |
| Gate-Drain Charge | 33nC |
| Input Capacitance | 2744pF |
| Output Capacitance | 126pF |
| Reverse Transfer Capacitance | 7pF |
| Single Pulse Avalanche Energy | 353mJ |
| Operating Junction and Storage Temperature | -55 to +150°C |
| Thermal Resistance Junction-to-Case Max | 0.62°C/W |
| Lead-free | Completely lead (Pb)-free device |
| Halogen-free | Lead (Pb)-free and halogen-free orderable device |
Download the complete datasheet for Vishay SiHH26N60EF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
