This single N-channel power MOSFET is rated for 600 V drain-source voltage and 34 A continuous drain current at 25 °C case temperature. It uses Vishay Siliconix 4th generation E series technology in a PowerPAK 10 x 12 package and is specified with 59 mΩ typical on-resistance at 25 °C and 10 V gate drive. The device provides 72 nC maximum total gate charge, 226 mJ single-pulse avalanche energy, and 192 W maximum power dissipation. It operates across a junction and storage temperature range of -55 °C to +150 °C and is offered in a lead-free, halogen-free orderable variant.
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Vishay SiHK065N60E technical specifications.
| Channel Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 600V |
| Continuous Drain Current @ TC=25°C | 34A |
| Continuous Drain Current @ TC=100°C | 21A |
| Pulsed Drain Current | 98A |
| Gate-Source Voltage | ±30V |
| Drain-Source On-Resistance Typ @ 25°C | 0.059Ω |
| Drain-Source On-Resistance Max @ 25°C | 0.068Ω |
| Total Gate Charge Max | 72nC |
| Gate-Source Charge | 19nC |
| Gate-Drain Charge | 11nC |
| Single Pulse Avalanche Energy | 226mJ |
| Maximum Power Dissipation | 192W |
| Junction-to-Case Thermal Resistance Max | 0.65°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen-free | Yes |
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