N-channel D Series power MOSFET provides a 500 V drain-source rating and 36 A continuous drain current at 25 °C case temperature. The device has a maximum drain-source on-resistance of 0.130 Ω at 10 V gate drive and 18 A drain current. Dynamic characteristics include 125 nC maximum total gate charge, 3233 pF typical input capacitance, and fast nanosecond switching times. Super-247 packaging supports up to 446 W power dissipation and a 0.28 °C/W maximum junction-to-case thermal resistance. The orderable lead-free and halogen-free version is end of life as of July 2024.
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| Transistor Type | N-Channel MOSFET |
| Configuration | Single |
| Package | Super-247 |
| Drain-Source Voltage | 500V |
| Drain-Source Voltage at Tj Max | 550V |
| Continuous Drain Current at 25°C Case | 36A |
| Continuous Drain Current at 100°C Case | 23A |
| Pulsed Drain Current | 112A |
| Drain-Source On-Resistance Max | 0.130Ω |
| Gate-Source Voltage | ±30V |
| Gate Threshold Voltage | 3.0 to 5.0V |
| Total Gate Charge Max | 125nC |
| Gate-Source Charge Typical | 23nC |
| Gate-Drain Charge Typical | 37nC |
| Input Capacitance Typical | 3233pF |
| Output Capacitance Typical | 285pF |
| Reverse Transfer Capacitance Typical | 25pF |
| Single Pulse Avalanche Energy | 332mJ |
| Maximum Power Dissipation | 446W |
| Operating Junction and Storage Temperature | -55 to +150°C |
| Maximum Junction-to-Case Thermal Resistance | 0.28°C/W |
| Maximum Junction-to-Ambient Thermal Resistance | 40°C/W |
| Diode Forward Voltage Max | 1.2V |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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