This N-channel power MOSFET is rated for 60 V drain-to-source voltage and is built on Vishay Siliconix TrenchFET Gen IV technology. It is offered in the PowerPAK SO-8L package and provides a maximum on-resistance of 4.5 mΩ at 10 V gate drive, 5.4 mΩ at 7.5 V, and 7.8 mΩ at 6 V. The device supports up to 79.4 A continuous drain current at TC = 25 °C and has a typical total gate charge of 15.5 nC at 6 V gate drive. Its operating junction temperature range is -55 °C to +150 °C, with maximum junction-to-case thermal resistance of 2.2 °C/W.
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Vishay SiJ186DP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage (VDS) | 60V |
| On-Resistance (RDS(on)) @ VGS=10 V | 0.0045 maxohm |
| On-Resistance (RDS(on)) @ VGS=7.5 V | 0.0054 maxohm |
| On-Resistance (RDS(on)) @ VGS=6 V | 0.0078 maxohm |
| Continuous Drain Current (TC=25°C) | 79.4A |
| Continuous Drain Current (TA=25°C) | 23A |
| Pulsed Drain Current | 150A |
| Total Gate Charge (Qg) @ VGS=6 V | 15.5 typnC |
| Input Capacitance (Ciss) | 1710 typpF |
| Output Capacitance (Coss) | 445 typpF |
| Reverse Transfer Capacitance (Crss) | 29 typpF |
| Gate Threshold Voltage (VGS(th)) | 2 to 3.6V |
| Power Dissipation (TC=25°C) | 57W |
| Operating Junction Temperature Range | -55 to +150°C |
| Thermal Resistance Junction-to-Case | 2.2 max°C/W |
| Body Diode Voltage (VSD) | 0.77 typ, 1.1 maxV |
| Reverse Recovery Time (trr) | 44 typ, 88 maxns |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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