This device is an N-channel 60 V TrenchFET power MOSFET in the PowerPAK SO-8L package. It supports continuous drain current up to 46.5 A at a case temperature of 25 °C and has maximum on-resistance of 8 mΩ at 10 V gate drive, 10 mΩ at 6 V, and 12.5 mΩ at 4.5 V. The MOSFET is specified for gate-source voltages up to ±20 V, typical input capacitance of 1400 pF, and total gate charge as low as 9.3 nC at 4.5 V. Its operating junction and storage temperature range is -55 °C to +150 °C, and the listed orderable version is lead-free and halogen-free.
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Vishay SiJ462DP technical specifications.
| Transistor Polarity | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 46.5A |
| Continuous Drain Current (Tc=70°C) | 37.2A |
| Continuous Drain Current (Ta=25°C) | 18.6A |
| Drain-Source On-Resistance Max @ Vgs=10 V | 0.0080Ω |
| Drain-Source On-Resistance Max @ Vgs=6 V | 0.0100Ω |
| Drain-Source On-Resistance Max @ Vgs=4.5 V | 0.0125Ω |
| Gate Threshold Voltage | 1.4 to 2.5V |
| Total Gate Charge Typ @ Vgs=4.5 V | 9.3nC |
| Input Capacitance Typ | 1400pF |
| Output Capacitance Typ | 525pF |
| Reverse Transfer Capacitance Typ | 45pF |
| Maximum Power Dissipation (Tc=25°C) | 31.2W |
| Operating Junction and Storage Temperature Range | -55 to +150°C |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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