The SIR120DP-T1-RE3 is a high-performance N-Channel TrenchFET Gen IV power MOSFET designed for a maximum drain-source voltage of 80 V. It features a very low RDS x Qg figure-of-merit (FOM) and is tuned for the lowest RDS x Qoss FOM to optimize switching performance. The device is 100% Rg and UIS tested, making it suitable for synchronous rectification, primary side switches, DC/DC converters, and motor drive control.
Temp Range-55 to 150°C
Quick Jump:
Technical Specifications
Vishay SIR120DP-T1-RE3 technical specifications.
General
| Drain to Source Voltage (Vdss) | 80V |
| Continuous Drain Current (Id) @ 25°C (Tc) | 106A |
| Continuous Drain Current (Id) @ 25°C (Ta) | 24.7A |
| Drain to Source Resistance (Rds On) @ 10V | 3.55mOhm |
| Gate-Source Threshold Voltage (Vgs th) | 3.5V |
| Gate Charge (Qg) | 94nC |
| Power Dissipation (Pd) @ 25°C (Tc) | 100W |
| Operating Temperature Range | -55 to 150°C |
| Input Capacitance (Ciss) | 4150pF |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Vishay SIR120DP-T1-RE3 Datasheet
Download the complete datasheet for Vishay SIR120DP-T1-RE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.