This N-channel TrenchFET Gen IV power MOSFET is rated for 60 V drain-source operation and is offered in a PowerPAK SO-8 Single package. It provides a maximum on-resistance of 5.8 mΩ at 10 V gate drive and 7.0 mΩ at 7.5 V, with typical total gate charge of 16 nC. Continuous drain current is rated to 73 A at case temperature 25 °C, and the device is 100 % Rg and UIS tested. The orderable part is lead-free and halogen-free and is intended for synchronous rectification, DC/DC converters, motor drives, battery and load switching, and primary-side switching.
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Vishay SiR184DP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| On-Resistance Max @ VGS=10 V | 5.8mΩ |
| On-Resistance Max @ VGS=7.5 V | 7.0mΩ |
| Total Gate Charge Typ | 16nC |
| Continuous Drain Current @ TC=25 °C | 73A |
| Continuous Drain Current @ TA=25 °C | 20.7A |
| Pulsed Drain Current | 100A |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 2 to 3.4V |
| Input Capacitance | 1490pF |
| Output Capacitance | 395pF |
| Reverse Transfer Capacitance | 22pF |
| Power Dissipation @ TC=25 °C | 62.5W |
| Operating Junction Temperature Range | -55 to +150°C |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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