This device is an N-channel 60 V power MOSFET in a single PowerPAK SO-8 package. It is specified for up to 73 A continuous drain current at TC = 25 °C and offers a maximum drain-source on-resistance of 5.4 mΩ at VGS = 10 V and 8.3 mΩ at VGS = 4.5 V. Typical total gate charge is 12.3 nC, supporting efficient switching in synchronous rectification, DC/DC conversion, motor drive, and load-switch applications. The MOSFET is rated for operation from -55 °C to +150 °C and the listed orderable part is lead-free and halogen-free.
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Vishay SiR184LDP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (TC=25°C) | 73A |
| Continuous Drain Current (TC=70°C) | 58.7A |
| Continuous Drain Current (TA=25°C) | 21.5A |
| Continuous Drain Current (TA=70°C) | 17.2A |
| Drain-Source On-Resistance Max @ VGS=10V | 5.4mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 8.3mΩ |
| Total Gate Charge Typ | 12.3nC |
| Gate-Source Threshold Voltage | 1 to 3V |
| Input Capacitance | 1950pF |
| Output Capacitance | 360pF |
| Reverse Transfer Capacitance | 19pF |
| Operating Junction and Storage Temperature Range | -55 to +150°C |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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