This device is a 60 V N-channel TrenchFET Gen IV power MOSFET in a PowerPAK SO-8 Single package. It provides a maximum drain-source on-resistance of 4.5 mΩ at 10 V gate drive, 5.4 mΩ at 7.5 V, and 7.8 mΩ at 6 V. The MOSFET is rated for 60 A continuous drain current at TC = 25 °C, 150 A pulsed drain current, and operation from -55 °C to +150 °C. Typical total gate charge is 15.5 nC at VGS = 6 V and 24.5 nC at VGS = 10 V, and the exact orderable part is specified as lead-free and halogen-free.
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Vishay SiR186DP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Drain-Source On-Resistance Max at VGS=10 V | 0.0045Ω |
| Drain-Source On-Resistance Max at VGS=7.5 V | 0.0054Ω |
| Drain-Source On-Resistance Max at VGS=6 V | 0.0078Ω |
| Total Gate Charge Typ at VGS=6 V | 15.5nC |
| Total Gate Charge Typ at VGS=10 V | 24.5nC |
| Continuous Drain Current at TC=25 °C | 60A |
| Pulsed Drain Current | 150A |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 2 to 3.6V |
| Input Capacitance | 1710pF |
| Output Capacitance | 445pF |
| Reverse Transfer Capacitance | 29pF |
| Operating Junction Temperature Range | -55 to +150°C |
| Junction-to-Case Thermal Resistance Max | 2.2°C/W |
| Package | PowerPAK SO-8 Single |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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