This N-channel TrenchFET Gen IV MOSFET is rated for 60 V drain-to-source operation and is housed in a PowerPAK SO-8 single package. It provides a maximum on-resistance of 4.4 mΩ at 10 V gate drive and 6.3 mΩ at 4.5 V, with typical gate charge of 15.2 nC at 4.5 V. Continuous drain current is rated to 80.3 A at TC = 25 °C or 23.8 A at TA = 25 °C, and maximum power dissipation reaches 57 W at TC = 25 °C. The device supports synchronous rectification, primary-side switching, DC/DC converters, and motor drive switching, and the listed orderable part is lead-free, halogen-free, and RoHS-compliant with exemptions.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SiR186LDP datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SiR186LDP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| On-Resistance Max @ VGS=10 V | 0.0044Ω |
| On-Resistance Max @ VGS=4.5 V | 0.0063Ω |
| Total Gate Charge Typ @ VGS=4.5 V | 15.2nC |
| Continuous Drain Current @ TC=25 °C | 80.3A |
| Continuous Drain Current @ TA=25 °C | 23.8A |
| Maximum Power Dissipation @ TC=25 °C | 57W |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 1 to 2.5V |
| Input Capacitance | 1980pF |
| Output Capacitance | 447pF |
| Reverse Transfer Capacitance | 24pF |
| Junction-to-Case Thermal Resistance Max | 2.2°C/W |
| Operating Junction Temperature Range | -55 to 150°C |
| RoHS | Yes with exemptions |
| Lead (pb)-free | Termination is Lead Free |
| Halogen-free | Yes |
Download the complete datasheet for Vishay SiR186LDP to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
