This N-channel power MOSFET is rated for 60 V drain-to-source voltage and is built on a TrenchFET Gen IV process in a single PowerPAK SO-8 package. It delivers a maximum on-resistance of 3.85 mΩ at 10 V gate drive and 4.90 mΩ at 7.5 V, with typical total gate charge as low as 22 nC at 7.5 V. Continuous drain current is rated to 60 A at 25 °C case temperature, with maximum power dissipation of 65.7 W and an operating junction range of -55 °C to +150 °C. Typical applications include synchronous rectification, primary-side switching, DC/DC converters, and motor drive switching.
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Vishay SiR188DP technical specifications.
| Transistor Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 60A |
| Continuous Drain Current (Ta=25°C) | 25.5A |
| Pulse Drain Current | 150A |
| On-Resistance Max @ Vgs=10 V | 3.85mΩ |
| On-Resistance Max @ Vgs=7.5 V | 4.90mΩ |
| Total Gate Charge Typ @ Vgs=7.5 V | 22nC |
| Total Gate Charge Typ @ Vgs=10 V | 29nC |
| Input Capacitance Typ | 1920pF |
| Output Capacitance Typ | 530pF |
| Reverse Transfer Capacitance Typ | 26pF |
| Power Dissipation Max | 65.7W |
| Operating Junction Temperature Range | -55 to +150°C |
| Thermal Resistance Junction-to-Case Max | 1.9°C/W |
| Thermal Resistance Junction-to-Ambient Max | 25°C/W |
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