The SIR624DP-T1-GE3 is a high-performance N-Channel enhancement mode MOSFET utilizing ThunderFET technology. It is optimized to provide a balance between on-resistance, gate charge, and switching losses. Rated for a 200V drain-source voltage and 18.6A continuous drain current, it is designed for applications including DC/DC converters, primary and secondary side switching, and synchronous rectification. The device is housed in the thermally enhanced PowerPAK SO-8 leadless package.
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Vishay SIR624DP-T1-GE3 technical specifications.
| Drain-Source Voltage (Vds) | 200V |
| Continuous Drain Current (Id) | 18.6A |
| Drain-Source On-Resistance (Rds on) Max @ 10V | 0.060Ω |
| Gate Charge (Qg) Typ | 15nC |
| Power Dissipation (Pd) Max | 52W |
| Gate-Source Voltage (Vgs) | ±20V |
| Operating Temperature Range | -55 to +150°C |
| Configuration | Single |
| RoHS | Compliant |
| Halogen-free | Yes |
| REACH | Contains Lead (7439-92-1) |
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