MOSFET N-CH 60V 60A 8-SOIC
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Vishay SIR662DP technical specifications.
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 250pF |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole, Surface Mount |
| Packaging | Rail/Tube |
| Rds On Max | 540mR |
| RoHS | Not Compliant |
No datasheet is available for this part.
