This device is an N-channel 60 V TrenchFET power MOSFET in a PowerPAK SO-8 package. It supports up to 60 A continuous drain current at case temperature of 25 °C and 150 A pulsed drain current. The MOSFET provides a maximum on-resistance of 6.0 mΩ at 10 V gate drive, 7.5 mΩ at 6 V, and 9.5 mΩ at 4.5 V. Typical total gate charge is 12 nC at 4.5 V gate drive, with typical input capacitance of 1750 pF. The operating junction and storage temperature range is -55 °C to 150 °C, and the device is marked by Vishay as not for new designs.
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Vishay SiR664DP technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 60A |
| Continuous Drain Current at 70 °C Case | 54A |
| Pulsed Drain Current | 150A |
| Single Pulse Avalanche Energy | 20mJ |
| Power Dissipation | 50W |
| Operating Junction Temperature Range | -55 to 150°C |
| On-Resistance at VGS=10 V | 6.0mΩ |
| On-Resistance at VGS=6 V | 7.5mΩ |
| On-Resistance at VGS=4.5 V | 9.5mΩ |
| Gate Threshold Voltage | 1.3 to 2.5V |
| Input Capacitance | 1750pF |
| Output Capacitance | 720pF |
| Reverse Transfer Capacitance | 60pF |
| Total Gate Charge | 12nC |
| Maximum Junction-to-Case Thermal Resistance | 2.5°C/W |
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