This N-channel power MOSFET is rated for 60 V drain-to-source operation and uses TrenchFET technology. It is offered in a PowerPAK SO-8 package and is 100% Rg and UIS tested. Vishay classifies the device as not for new designs and lists SiR186LDP as the alternative device.
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Vishay SiR670DP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Device Type | MOSFET |
| Technology | TrenchFET |
| Package | PowerPAK SO-8 |
| Gate Resistance Tested | 100 % |
| UIS Tested | Yes |
Download the complete datasheet for Vishay SiR670DP to view detailed technical specifications.
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