The SIR680LDP-T1-RE3 is an N-Channel 80 V (D-S) power MOSFET utilizing TrenchFET Gen IV technology. It is optimized for very low Rds-Qg and Rds-Qoss figures-of-merit (FOM) to enhance efficiency in high-frequency switching. The device is 100% Rg and UIS tested, designed for industrial applications including synchronous rectification, primary side switches, DC/DC converters, and motor drive switches. It is housed in the leadless PowerPAK SO-8 package for improved thermal performance.
Temp Range-55 to +150°C
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Technical Specifications
Vishay SIR680LDP-T1-RE3 technical specifications.
General
| Drain-to-Source Voltage (Vds) | 80V |
| Continuous Drain Current (Id) @ Tc=25°C | 130A |
| Drain-Source On-Resistance (Rds(on)) @ Vgs=10V | 2.8mΩ |
| Drain-Source On-Resistance (Rds(on)) @ Vgs=4.5V | 3.55mΩ |
| Gate-Source Voltage (Vgs) | ±20V |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.5V |
| Typical Gate Charge (Qg) @ Vgs=10V | 40.5nC |
| Maximum Power Dissipation (Pd) @ Tc=25°C | 104W |
| Operating Temperature Range | -55 to +150°C |
| Transistor Polarity | N-Channel |
| Configuration | Single |
Compliance
| RoHS | RoHS3 Compliant |
| Halogen-free | Yes |
| Lead-free | Lead (Pb)-free |
| REACH | REACH Unaffected |
Datasheet
Vishay SIR680LDP-T1-RE3 Datasheet
Download the complete datasheet for Vishay SIR680LDP-T1-RE3 to view detailed technical specifications.
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