The SIR681DP-T1-RE3 is an N-channel TrenchFET Gen IV power MOSFET featuring high-density design and optimized low Rds(on) x Qg figure-of-merit. It is designed for synchronous rectification, primary-side switch, and DC/DC converters.
Temp Range-55 to +150°C
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Technical Specifications
Vishay SIR681DP-T1-RE3 technical specifications.
General
| Drain-to-Source Voltage (Vds) | 80V |
| Continuous Drain Current (Id) | 100A |
| Static Drain-to-Source On-Resistance (Rds on) Max | 1.3mOhms |
| Gate-Source Threshold Voltage (Vgs th) | 2.0 to 4.0V |
| Gate Charge (Qg) | 62nC |
| Power Dissipation (Pd) | 104W |
| Operating Temperature Range | -55 to +150°C |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Vishay SIR681DP-T1-RE3 Datasheet
Download the complete datasheet for Vishay SIR681DP-T1-RE3 to view detailed technical specifications.
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