This N-channel power MOSFET is rated for 60 V drain-source operation and is housed in a PowerPAK SO-8 package. It offers a maximum on-resistance of 3.5 mΩ at 10 V gate drive, 4.5 mΩ at 6 V, and 6.0 mΩ at 4.5 V, with typical total gate charge of 20.5 nC at 4.5 V. The device supports up to 60 A continuous drain current at a 25 °C case temperature and operates across a -55 °C to 150 °C junction temperature range. The listed orderable device is lead-free, halogen-free, and RoHS-compliant with exemptions.
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Vishay SiR688DP technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 60 at TC = 25 °CA |
| Continuous Drain Current | 29.2 at TA = 25 °CA |
| Pulsed Drain Current | 100A |
| Drain-Source On-Resistance | 3.5 max at VGS = 10 VmΩ |
| Drain-Source On-Resistance | 4.5 max at VGS = 6 VmΩ |
| Drain-Source On-Resistance | 6.0 max at VGS = 4.5 VmΩ |
| Gate Threshold Voltage | 1.3 to 2.7V |
| Forward Transconductance | 70S |
| Input Capacitance | 3105pF |
| Output Capacitance | 1345pF |
| Reverse Transfer Capacitance | 95pF |
| Total Gate Charge | 20.5 typ at VGS = 4.5 VnC |
| Power Dissipation | 83 at TC = 25 °CW |
| Operating Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 11.5°C/W |
| Body Diode Reverse Recovery Charge | 37 typ, 74 maxnC |
| Rohs-compliant | Yes with exemptions |
| Lead (pb)-free | Termination is Lead Free |
| Halogen-free | Yes |
| Green | No |
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