The SIR696DP-T1-GE3 is a high-performance N-channel 100 V TrenchFET Gen IV power MOSFET. It features extremely low RDS(on) and low Qg to improve efficiency and power density in demanding power conversion applications. It is designed for synchronous rectification, primary-side switches, and DC/DC converters.
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Technical Specifications
Vishay SIR696DP-T1-GE3 technical specifications.
General
| Drain-to-Source Voltage (Vds) | 100V |
| Continuous Drain Current (Id) | 40A |
| Rds On (Max) @ Vgs = 10V | 8.5mOhm |
| Gate Charge (Qg) | 13.2nC |
| Vgs(th) (Max) | 4.0V |
| Input Capacitance (Ciss) | 1005pF |
| Max Power Dissipation (Pd) | 48W |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Vishay SIR696DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIR696DP-T1-GE3 to view detailed technical specifications.
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