N-channel power MOSFET supports a 100 V drain-source rating and is housed in a PowerPAK SO-8 package. The device uses TrenchFET technology and is specified with 6.6 mΩ maximum on-resistance at 10 V gate drive. Continuous drain current is rated up to 60 A when package-limited, with a 100 A pulsed drain-current rating. The operating junction and storage temperature range is -55 °C to 150 °C. Lead-free, halogen-free, and RoHS-compliant construction is supported for the referenced ordering configuration.
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| Channel Type | N-channel |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Drain-Source On-Resistance at 10 V | 0.0066 maxΩ |
| Drain-Source On-Resistance at 7.5 V | 0.0070 maxΩ |
| Drain-Source On-Resistance at 4.5 V | 0.0105 maxΩ |
| Continuous Drain Current, Case 25 °C | 60 package-limitedA |
| Continuous Drain Current, Ambient 25 °C | 23.3A |
| Pulsed Drain Current | 100A |
| Total Gate Charge at 10 V | 53.5 typ, 80 maxnC |
| Input Capacitance | 2866 typpF |
| Output Capacitance | 719 typpF |
| Reverse Transfer Capacitance | 66 typpF |
| Maximum Power Dissipation, Case 25 °C | 104W |
| Operating Junction Temperature Range | -55 to 150°C |
| Junction-to-Case Thermal Resistance | 1.2 max°C/W |
| Junction-to-Ambient Thermal Resistance | 20 max°C/W |
| Package | PowerPAK SO-8 |
| RoHS | Compliant |
| Halogen-free | Yes |
| Lead-free | Yes |
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