The SiRA20DP is a TrenchFET Gen IV N-channel 25V power MOSFET designed for high power density applications. It features optimized gate charge (Qg) and gate-drain charge (Qgd) to reduce switching losses and is 100% Rg and UIS tested. The device is packaged in a PowerPAK SO-8 designed to provide higher power density with a 10-mil clip that reduces package resistance.
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| Drain-Source Voltage (Vds) | 25V |
| Continuous Drain Current (Id) @ Tc=25°C | 100A |
| Static Drain-Source On-Resistance (Rds(on)) @ 10V | 0.58mΩ |
| Static Drain-Source On-Resistance (Rds(on)) @ 4.5V | 0.82mΩ |
| Total Gate Charge (Qg) Typ. | 61nC |
| Gate-Source Voltage (Vgs) | +16 / -12V |
| Power Dissipation (Pd) @ Tc=25°C | 104W |
| Input Capacitance (Ciss) Typ. | 7230pF |
| Operating Junction Temperature Range | -55 to +150°C |
| RoHS | Compliant |
| Halogen-free | Yes |
| Lead-free | Yes |
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