The SIS176LDN-T1-GE3 is an N-channel 70 V TrenchFET Gen IV power MOSFET designed for high efficiency power conversion and switching. It features low on-resistance and is 100% Rg and UIS tested, optimized for use in power supplies and industrial equipment.
Temp Range-55 to +150°C
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Technical Specifications
Vishay SIS176LDN-T1-GE3 technical specifications.
General
| Drain-to-Source Voltage (VDS) | 70V |
| Continuous Drain Current (ID) | 40A |
| RDS(on) Max (at VGS = 10 V) | 6.8mOhms |
| Gate-Source Voltage (VGS) | 20V |
| Total Gate Charge (Qg) | 18.5nC |
| Operating Temperature Range | -55 to +150°C |
| Power Dissipation (Max) | 52W |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
| Lead-free | Yes |
Datasheet
Vishay SIS176LDN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIS176LDN-T1-GE3 to view detailed technical specifications.
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