This device is an N-channel 60 V TrenchFET Gen IV power MOSFET in a single PowerPAK 1212-8 package. It specifies a maximum drain-source on-resistance of 5.4 mΩ at 10 V gate drive and 8.3 mΩ at 4.5 V gate drive. Typical total gate charge is 12.3 nC at 4.5 V and 27 nC at 10 V, with typical input capacitance of 1950 pF. Continuous drain current is rated to 69.4 A at TC = 25 °C and 18.7 A at TA = 25 °C on a 1 in x 1 in FR4 board. The device is specified for a -55 °C to +150 °C junction and storage temperature range and is offered as a lead-free, halogen-free part.
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Vishay SiS184LDN technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Drain Current (Continuous, TC=25°C) | 69.4A |
| Drain Current (Continuous, TA=25°C) | 18.7A |
| Drain Current (Pulsed) | 150A |
| Drain-Source On-Resistance (max @ VGS=10 V) | 0.0054Ω |
| Drain-Source On-Resistance (max @ VGS=4.5 V) | 0.0083Ω |
| Gate Charge (typ @ VGS=4.5 V) | 12.3nC |
| Gate Charge (typ @ VGS=10 V) | 27nC |
| Input Capacitance | 1950pF |
| Output Capacitance | 360pF |
| Gate Threshold Voltage | 1 to 3V |
| Power Dissipation (TC=25°C) | 52W |
| Junction-to-Case Thermal Resistance (max) | 2.4°C/W |
| Operating Junction and Storage Temperature Range | -55 to +150°C |
| Package | PowerPAK 1212-8 Single |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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