The SISB46DN-T1-GE3 is a dual N-channel 40V enhancement mode power MOSFET utilizing TrenchFET Gen IV technology. It is tuned for the lowest RDS-Qoss Figure of Merit (FOM) and featured a Qgd/Qgs ratio less than 1 to optimize switching characteristics. The device is 100% Rg and UIS tested, designed for applications such as synchronous rectification, DC/DC converters, motor drive switches, and battery/load switching.
Vishay SISB46DN-T1-GE3 technical specifications.
| Drain-Source Breakdown Voltage | 40V |
| Continuous Drain Current | 34A |
| Drain-Source On-State Resistance (Max) | 15.8mΩ |
| Gate-Source Threshold Voltage (Min/Max) | 1.1 to 2.2V |
| Gate Charge (Qg) | 6.8 to 22nC |
| Power Dissipation | 23W |
| Operating Temperature Range | -55 to 150°C |
| RoHS | Compliant |
| Halogen-free | Yes |
No datasheet is available for this part.
