Common-drain dual N-channel MOSFET for bidirectional switching, load switching, and battery protection in 24 V systems. It is rated for 60 V source-to-source and up to 52 A continuous current at TC = 25 °C. Maximum on-resistance is 13 mΩ at 10 V gate drive and 18.5 mΩ at 4.5 V, with typical total gate charge of 10.2 nC at 4.5 V drive. The device is housed in a thermally enhanced PowerPAK 1212-8SCD package and supports a -55 °C to +150 °C junction temperature range.
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Vishay SiSF20DN technical specifications.
| Configuration | Common-Drain Dual N-Channel |
| Source-to-Source Voltage | 60V |
| On-Resistance Max @ VGS = 10 V | 0.0130Ω |
| On-Resistance Max @ VGS = 4.5 V | 0.0185Ω |
| Continuous Current @ TC = 25 °C | 52A |
| Continuous Current @ TC = 70 °C | 41A |
| Pulsed Current | 100A |
| Gate Threshold Voltage | 1 to 3V |
| Total Gate Charge Typ @ VGS = 4.5 V | 10.2nC |
| Total Gate Charge Typ @ VGS = 10 V | 22nC |
| Input Capacitance Typ | 1290pF |
| Output Capacitance Typ | 340pF |
| Reverse Transfer Capacitance Typ | 8pF |
| Power Dissipation @ TC = 25 °C | 69.4W |
| Junction-to-Case Thermal Resistance Max | 1.8°C/W |
| Junction Temperature Range | -55 to +150°C |
| Lead (pb)-free | Yes |
| Halogen-free | Yes |
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