This device is a single N-channel 60 V power MOSFET in the PowerPAK 1212-8S package. It supports up to 92.5 A continuous drain current at case temperature of 25 °C and features a maximum on-resistance of 3.65 mΩ at 10 V gate drive and 5.10 mΩ at 4.5 V gate drive. Typical total gate charge is 17.4 nC at 4.5 V and 37.3 nC at 10 V, and the device is specified for operation from -55 °C to +150 °C. It is intended for synchronous rectification, primary-side switching, DC/DC converters, motor drives, and battery or load switching. The orderable part is lead-free and halogen-free.
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Vishay SiSS22LDN technical specifications.
| Channel Type | N-Channel |
| Configuration | Single |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (Tc=25°C) | 92.5A |
| Continuous Drain Current (Ta=25°C) | 25.5A |
| On-Resistance Max @ Vgs=10V | 0.00365Ω |
| On-Resistance Max @ Vgs=4.5V | 0.00510Ω |
| Total Gate Charge Typ @ Vgs=4.5V | 17.4nC |
| Total Gate Charge Typ @ Vgs=10V | 37.3nC |
| Input Capacitance | 2540pF |
| Output Capacitance | 545pF |
| Reverse Transfer Capacitance | 26pF |
| Gate Threshold Voltage | 1 to 2.5V |
| Maximum Power Dissipation (Tc=25°C) | 65.7W |
| Operating Junction and Storage Temperature Range | -55 to +150°C |
| Junction-to-Case Thermal Resistance Max | 1.9°C/W |
| Body Diode Reverse Recovery Time Typ | 33ns |
| Lead-free | Yes |
| Halogen-free | Yes |
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