This N-channel power MOSFET uses Vishay Siliconix TrenchFET Gen IV technology in a PowerPAK 1212-8S package. It is rated for 60 V drain-source voltage, 60 A continuous drain current at 25 °C case temperature, and 57 W power dissipation at 25 °C case temperature. Maximum on-resistance is 4.5 mΩ at 10 V gate drive, 5.4 mΩ at 7.5 V, and 7.8 mΩ at 6 V. The device supports pulsed drain current up to 150 A, operates from -55 °C to +150 °C, and is offered in lead-free, halogen-free orderable versions.
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Vishay SiSS26DN technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 60 @ Tc=25°CA |
| Continuous Drain Current | 23.3 @ Ta=25°CA |
| Pulsed Drain Current | 150A |
| Single Pulse Avalanche Current | 25A |
| Single Pulse Avalanche Energy | 31.2mJ |
| Power Dissipation | 57 @ Tc=25°CW |
| Operating Junction Temperature Range | -55 to +150°C |
| RDS(on) Max | 0.0045 @ VGS=10VΩ |
| RDS(on) Max | 0.0054 @ VGS=7.5VΩ |
| RDS(on) Max | 0.0078 @ VGS=6VΩ |
| Gate Charge Typ | 15.5 @ VGS=6VnC |
| Input Capacitance Typ | 1710pF |
| Output Capacitance Typ | 445pF |
| Reverse Transfer Capacitance Typ | 29pF |
| Output Charge Typ | 27.5nC |
| Lead Free | Yes |
| Halogen Free | Yes |
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