This N-channel TrenchFET Gen IV power MOSFET is rated for 60 V drain-source voltage and up to 81.2 A continuous drain current at 25 °C case temperature. It provides a maximum on-resistance of 4.3 mΩ at 10 V gate drive and 6.2 mΩ at 4.5 V, with typical total gate charge of 15.2 nC at 4.5 V. The device is supplied in a PowerPAK 1212-8S package with a 3.3 mm by 3.3 mm footprint and supports operating junction temperatures from -55 °C to 150 °C. It is lead-free and halogen-free with Sn terminal plating and unlimited floor life, and it is intended for synchronous rectification, DC/DC conversion, motor drives, battery and load switching, and solar microinverters.
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Vishay SiSS26LDN technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current @ Tc = 25 °C | 81.2A |
| Continuous Drain Current @ Tc = 70 °C | 65A |
| Continuous Drain Current @ Ta = 25 °C | 23.7A |
| On-Resistance Max @ Vgs = 10 V | 0.0043Ω |
| On-Resistance Max @ Vgs = 4.5 V | 0.0062Ω |
| Total Gate Charge Typ @ Vgs = 10 V | 31.5nC |
| Total Gate Charge Typ @ Vgs = 4.5 V | 15.2nC |
| Gate Threshold Voltage | 1 to 2.5V |
| Input Capacitance Typ | 1980pF |
| Output Capacitance Typ | 447pF |
| Reverse Transfer Capacitance Typ | 24pF |
| Operating Junction Temperature Range | -55 to +150°C |
| Junction-to-Case Thermal Resistance Max | 2.2°C/W |
| Junction-to-Ambient Thermal Resistance Max | 26°C/W |
| Package Size | 3.3 x 3.3mm |
| Floor Life | Unlimited |
| RoHS | Yes with exemptions |
| Lead Free | Termination is Lead Free |
| Halogen Free | Yes |
| Green | No |
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