N-channel 30 V MOSFET with a monolithic Schottky diode in the PowerPAK 1212-8S package. It is specified for up to 181.8 A continuous drain current at TC = 25 °C, with maximum on-resistance of 1.31 mΩ at 10 V gate drive and 2.01 mΩ at 4.5 V gate drive. Typical total gate charge is 25.9 nC at 4.5 V, supporting efficient high-frequency switching in synchronous rectification, synchronous buck converter, and DC/DC conversion applications. The device operates over a -55 °C to +150 °C junction temperature range and the orderable version is lead-free, halogen-free, and RoHS-compliant with exemptions.
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| Transistor Type | N-Channel MOSFET with Schottky Diode |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 181.8A |
| Drain-Source On-Resistance @ VGS=10 V | 1.31 maxmΩ |
| Drain-Source On-Resistance @ VGS=4.5 V | 2.01 maxmΩ |
| Total Gate Charge @ VGS=4.5 V | 25.9 typnC |
| Gate-Source Voltage | +16 / -12V |
| Power Dissipation | 65.8W |
| Operating Junction Temperature Range | -55 to +150°C |
| Junction-to-Case Thermal Resistance | 1.9 max°C/W |
| Input Capacitance | 3960 typpF |
| Output Capacitance | 1785 typpF |
| Reverse Transfer Capacitance | 142 typpF |
| Gate Threshold Voltage | 1 to 2.5V |
| Forward Transconductance | 84 typS |
| Continuous Source-Drain Diode Current | 97.5A |
| RoHS | Yes with exemptions |
| Lead (pb)-free | Termination is Lead Free |
| Halogen-free | Yes |
| Green | No |
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