The SIZ260DT is a dual N-channel 60 V TrenchFET Gen IV power MOSFET housed in a PowerPAIR 3x3S package. It features a compact design with two N-channel MOSFETs in a single footprint, optimized for high power density and efficiency. The device is 100% Rg and UIS tested, offering very low on-resistance for reduced conduction losses.
Temp Range-55 to +150°C
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Technical Specifications
Vishay SIZ260DT-T1-GE3 technical specifications.
General
| Drain-Source Voltage (Vds) | 60V |
| Continuous Drain Current (Id) | 40A |
| RDS(on) Max (Vgs = 10 V) - Channel 1 | 9.95mΩ |
| RDS(on) Max (Vgs = 10 V) - Channel 2 | 9.95mΩ |
| Gate Charge (Qg) Typ | 8.4nC |
| Operating Temperature Range | -55 to +150°C |
| Gate-Source Voltage (Vgs) | +20 / -16V |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Vishay SIZ260DT-T1-GE3 Datasheet
Download the complete datasheet for Vishay SIZ260DT-T1-GE3 to view detailed technical specifications.
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