Dual N-channel 30 V enhancement-mode MOSFET array integrates two TrenchFET Gen V devices in an 8-pin PowerPAIR 6 x 5F surface-mount package. The device supports up to 258 A continuous drain current and 74 W maximum power dissipation. Maximum drain-source on-resistance is 2.45 mΩ and typical gate charge is 18.5 nC. Operating temperature range is -55 °C to 150 °C. The device is 100% Rg and UIS tested.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SiZF928DT datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Transistor Configuration | Dual |
| Channel Type | N-Channel |
| Drain-Source Voltage (Vds) | 30V |
| Continuous Drain Current (Id) | 258A |
| Drain-Source On-Resistance (Rds(on)) | 2.45mΩ |
| Gate Charge (Qg) | 18.5nC |
| Power Dissipation (Pd) | 74W |
| Mounting Type | Surface Mount |
| Package Type | PowerPAIR 6 x 5F |
| Pin Count | 8 |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 150°C |
| Number of Elements per Chip | 2 |
| Channel Mode | Enhancement |
| Rg Tested | Yes |
| UIS Tested | Yes |
| Lead-free | Yes |
| Halogen-free | Yes |
Download the complete datasheet for Vishay SiZF928DT to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
