The SQ2364EES is an automotive-grade N-channel TrenchFET power MOSFET in a SOT-23 package. It is AEC-Q101 qualified and designed for high-temperature operation up to 175 °C. The device features low on-resistance and is 100% Rg and UIS tested, with typical ESD protection of 800 V.
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Technical Specifications
Vishay SQ2364EES-T1_GE3 technical specifications.
General
| Drain-Source Voltage (VDS) | 60V |
| Continuous Drain Current (ID) | 2A |
| Pulsed Drain Current (IDM) | 8A |
| Drain-Source On-Resistance (RDS(on)) @ VGS=4.5V | 0.190Ω |
| Drain-Source On-Resistance (RDS(on)) @ VGS=1.5V | 0.245Ω |
| Gate-Source Voltage (VGS) | ±20V |
| Maximum Power Dissipation @ 25 °C | 3W |
| Operating Junction Temperature Range | -55 to +175°C |
| Gate-Source Threshold Voltage (VGS(th)) | 0.6 to 1.4V |
Compliance
| Aec-q101 | Qualified |
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Vishay SQ2364EES-T1_GE3 Datasheet
Download the complete datasheet for Vishay SQ2364EES-T1_GE3 to view detailed technical specifications.
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