This automotive-grade N-channel MOSFET is rated for 60 V drain-source voltage and is housed in a TO-252 package with low thermal resistance. It supports 100 A continuous drain current at 25 °C and specifies a maximum on-resistance of 4.0 mΩ at 10 V gate drive and 5.2 mΩ at 4.5 V gate drive. The device is AEC-Q101 qualified, 100 % Rg and UIS tested, and operates over a junction temperature range of -55 °C to 175 °C. Typical dynamic characteristics include 4425 pF input capacitance and 60 nC total gate charge.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Vishay SQD50034EL datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Vishay SQD50034EL technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 100A |
| Continuous Drain Current at 125 °C | 68A |
| Drain-Source On-Resistance at VGS = 10 V | 4.0 maxmΩ |
| Drain-Source On-Resistance at VGS = 4.5 V | 5.2 maxmΩ |
| Gate-Source Threshold Voltage | 1.5 to 2.5V |
| Maximum Power Dissipation | 107W |
| Operating Junction Temperature Range | -55 to 175°C |
| Junction-to-Case Thermal Resistance | 1.4°C/W |
| Input Capacitance | 4425 typpF |
| Output Capacitance | 1989 typpF |
| Total Gate Charge | 60 typnC |
| Forward Transconductance | 97 typS |
| Pulsed Drain Current | 320A |
| Single Pulse Avalanche Energy | 115mJ |
Download the complete datasheet for Vishay SQD50034EL to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
