This device is a single N-channel power MOSFET rated for 60 V drain-source voltage in a PowerPAK SO-8L package. It is specified for 75 A drain current and maximum on-resistance of 0.013 ohm at 4.5 V gate drive or 0.012 ohm at 10 V gate drive. The MOSFET is AEC-Q101 qualified and supports operation up to 175 °C junction temperature. Vishay identifies it as a TrenchFET Gen IV automotive MOSFET with 100% Rg and UIS testing.
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Vishay SQJ164ELP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 75A |
| On-Resistance Max @ VGS=4.5 V | 0.013ohm |
| On-Resistance Max @ VGS=10 V | 0.012ohm |
| Operating Junction Temperature Max | 175°C |
| Gate-Source Threshold Voltage | 1.5 to 2.5V |
| Gate Leakage Max | 100nA |
| Junction-to-Case Thermal Resistance | 0.8°C/W |
| Body Diode Forward Voltage Max | 1.1V |
| AEC Qualification | AEC-Q101 |
| Package | PowerPAK SO-8L |
Download the complete datasheet for Vishay SQJ164ELP to view detailed technical specifications.
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