This automotive N-channel MOSFET is rated for 60 V drain-source voltage and operates to 175 °C junction temperature. It uses Vishay TrenchFET technology in a single PowerPAK SO-8L package and is AEC-Q101 qualified. The device supports up to 75 A continuous drain current at 25 °C case temperature and specifies a maximum on-resistance of 6.2 mΩ at 10 V gate drive. It also features 100% Rg and UIS testing, with typical total gate charge of 35 nC at 10 A and 30 V.
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Vishay SQJA04EP technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 75A |
| Continuous Drain Current at 125 °C | 44A |
| On-Resistance Max at VGS = 10 V | 0.0062Ω |
| On-Resistance Typ at VGS = 10 V | 0.0051Ω |
| Gate-Source Threshold Voltage | 2.5 to 3.5V |
| Total Gate Charge Typ | 35nC |
| Input Capacitance Typ | 2685pF |
| Output Capacitance Typ | 1105pF |
| Reverse Transfer Capacitance Typ | 35pF |
| Gate Resistance Typ | 0.46Ω |
| Maximum Power Dissipation | 68W |
| Operating Junction Temperature Range | -55 to +175°C |
| Junction-to-Ambient Thermal Resistance | 68°C/W |
| Junction-to-Case Thermal Resistance | 2.2°C/W |
| Package | PowerPAK SO-8L |
| AEC Qualification | AEC-Q101 qualified |
Download the complete datasheet for Vishay SQJA04EP to view detailed technical specifications.
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