This dual N-channel automotive MOSFET uses TrenchFET technology and is rated for 60 V drain-source operation with a 175 °C maximum junction temperature. Each leg supports 63 A continuous drain current at 25 °C case temperature, with maximum on-resistance of 9 mΩ at 10 V gate drive and 13 mΩ at 4.5 V. The device is AEC-Q101 qualified, 100% RG and UIS tested, and housed in a PowerPAK 8 x 8L package. It is lead-free, RoHS-compliant, and halogen-free.
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Vishay SQJQ960EL technical specifications.
| Channel Type | Dual N-Channel |
| Technology | TrenchFET |
| Drain-Source Voltage (Vds) | 60V |
| Maximum Junction Temperature | 175°C |
| On-Resistance Rds(on) at Vgs = 10 V | 9mΩ |
| On-Resistance Rds(on) at Vgs = 4.5 V | 13mΩ |
| Continuous Drain Current per Leg at Tc = 25 °C | 63A |
| Continuous Drain Current per Leg at Tc = 125 °C | 36A |
| Gate-Source Voltage | ±20V |
| Continuous Source Current | 50A |
| Pulsed Drain Current | 200A |
| Single Pulse Avalanche Current | 26A |
| Single Pulse Avalanche Energy | 34mJ |
| Maximum Power Dissipation at Tc = 25 °C | 71W |
| Maximum Power Dissipation at Tc = 125 °C | 24W |
| Operating Junction and Storage Temperature Range | -55 to +175°C |
| Junction-to-Ambient Thermal Resistance | 75°C/W |
| Junction-to-Case Thermal Resistance | 2.1°C/W |
| AEC-Q101 Qualified | Yes |
| Package | PowerPAK 8 x 8L |
| RoHS | Compliant |
| Halogen-free | Yes |
| Lead-free | Yes |
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